| dc.contributor.advisor | alexandrov, dimiter | |
| dc.contributor.advisor | butcher, scott | |
| dc.contributor.author | menkad, tarik | |
| dc.date.accessioned | 2012-11-11t03:25:32z | |
| dc.date.available | 2012-11-11t03:25:32z | |
| dc.date.created | 2012-04 | |
| dc.date.issued | 2012-11-10 | |
| dc.identifier.uri | http://knowledgecommons.lakeheadu.ca/handle/2453/314 | |
| dc.description.abstract | quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. a gallium nitride high frequency field effect transistor (fet), the subject of this work, exploits a newly found exciton source in indium gallium nitride inxga1-xn. these quasi-particles are used as a quantum electron source for the fet channel, made of intrinsic gallium nitride (gan). the present work addresses the natural need for providing this high frequency transistor with a device model. following the same steps as those used in classical metal-oxide-semiconductor field effect transistor (mosfet) modeling, a model for the metal oxide heterojunction capacitor; core of this high frequency field effect transistor, is first developed. | en_us |
| dc.language.iso | en_us | en_us |
| dc.subject | metal-oxide-semiconductor field effect transistor (mosfet) | en_us |
| dc.subject | quantum devices | en_us |
| dc.subject | gallium nitride high frequency field effect transistor (fet) | en_us |
| dc.subject | gallium nitride | en_us |
| dc.title | modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model | en_us |
| dc.type | thesis | en_us |
| etd.degree.name | m.sc. | en_us |
| etd.degree.level | master | en_us |
| etd.degree.discipline | engineering : electrical & computer | en_us |
| etd.degree.grantor | 阿根廷vs墨西哥竞猜
| en_us |
