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dc.contributor.advisorgallagher, mark
dc.contributor.authorwu, wei
dc.date.accessioned2017-06-08t13:21:04z
dc.date.available2017-06-08t13:21:04z
dc.date.created2007
dc.date.issued2007
dc.identifier.urihttp://knowledgecommons.lakeheadu.ca/handle/2453/3754
dc.description.abstractwe have used a combination of scanning tunneling microscopy (stm) and low energy electron diffraction to investigate the au-induced morphology of vicinal si samples miscut from (111) by 3.8°, and 12.3° toward [112]. the surface morphology changes dramatically with au coverage on both samples. on the 3.8° samples, gold deposition leads to the formation of the (775) facets. the (775) facet is orientated 8.5° toward [112] and characterized by 1-d chains running along [110] with a spacing of 21.3 a. the formation of the (775) facet is consistent with previous ideas that it represents a low energy facet on these surfaces. on the 12.3° sample no single low energy facet was observed in the coverage range (0-0.24ml) investigated. instead, (13 13 7), (995), and (553) facets are formed at 0.10 ml, 0.20 ml, and 0.24 ml respectively.
dc.language.isoen_us
dc.subjectsurface chemistry
dc.subjectgold - surfaces
dc.subjectsilicon - surfaces
dc.titleinvestigation of the au-induced morphology of 3.8 and 12.3 degree silicon surfaces / by wei wu.
dc.typethesis
etd.degree.namem.sc.
etd.degree.levelmaster
etd.degree.disciplinephysics
etd.degree.grantor阿根廷vs墨西哥竞猜


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