optical determination of metal-semiconductor schottky barriers

dc.contributor.advisor	keeler, w. j.
dc.contributor.author	cheng, stephen kwok-wah
dc.date.accessioned	2017-06-06t13:40:21z
dc.date.available	2017-06-06t13:40:21z
dc.date.created	1982
dc.date.issued	1982
dc.identifier.uri	http://knowledgecommons.lakeheadu.ca/handle/2453/2329
dc.description.abstract	the photovoltage produced by a schottky barrier photocell shows a strong temperature dependence if the barrier is not too large. we have used this temperature dependence to obtain the barrier height for several iii-v semiconductor~au, ag combinations. the results suggest that a simple fermi level difference model is most appropriate for many of these small barrier ili-v photocells, this appears to be the case, even if the fermi level difference leads to a barrier greater than the energy gap of the semiconductor.
dc.language.iso	en_us
dc.subject	diodes, schottky-barrier
dc.subject	semiconductor-metal boundaries
dc.title	optical determination of metal-semiconductor schottky barriers
dc.type	thesis
etd.degree.name	master of science
etd.degree.level	master
etd.degree.discipline	chemistry
etd.degree.grantor	阿根廷vs墨西哥竞猜