the photovoltage produced by a schottky barrier photocell shows a strong temperature dependence if the barrier is not too large. we have used this temperature dependence to obtain the barrier height for several iii-v semiconductor~au, ag combinations. the results suggest that a simple fermi level difference model is most appropriate for many of these small barrier ili-v photocells, this appears to be the case, even if the fermi level difference leads to a barrier greater than the energy gap of the semiconductor.