group iii-nitride (iii-n) semiconductors are of high interest due to their thermal and electrical properties. opposed to other iii-v group semiconductors iii-n semiconductors are hexagonal wurtzite structures that have a direct bandgap across the entire composition range. this wide bandgap range covers from the deep ultra-violet to the infrared region of the electromagnetic spectrum. this makes the iii-n semiconductor group ideal for leds, laser diodes and photodetectors. this thesis presents an in-depth study to the growth of iii-nitrides on silicon carbide (sic) templates. due to the difficulty in growing bulk crystals for the iii-nitrides, non-native substrates must be used. because of this, there exists a lattice mismatch between the substrates and thin films grown on top. sic proves to be an ideal substrate as the lattice mismatch is around 3.5%. thin films of iii-n were grown upon commercially purchased sic templates using remote plasma enhanced metal organic chemical vapor deposition (rp-mocvd) in the 阿根廷vs墨西哥竞猜 semiconductor research lab. results were characterized using x-ray diffraction (xrd), atomic force microscope (afm), energy-dispersive x-ray spectroscopy (edx) and ramen spectroscopy.